本文整理汇总了C++中HAL_FLASH_Unlock函数的典型用法代码示例。如果您正苦于以下问题:C++ HAL_FLASH_Unlock函数的具体用法?C++ HAL_FLASH_Unlock怎么用?C++ HAL_FLASH_Unlock使用的例子?那么恭喜您, 这里精选的函数代码示例或许可以为您提供帮助。
在下文中一共展示了HAL_FLASH_Unlock函数的15个代码示例,这些例子默认根据受欢迎程度排序。您可以为喜欢或者感觉有用的代码点赞,您的评价将有助于系统推荐出更棒的C++代码示例。
示例1: flash_erase
void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
示例2: FLASH_If_WriteProtectionConfig
/**
* @brief Configure the write protection status of user flash area.
* @param modifier DISABLE or ENABLE the protection
* @retval HAL_StatusTypeDef HAL_OK if change is applied.
*/
HAL_StatusTypeDef FLASH_If_WriteProtectionConfig(uint32_t modifier)
{
uint32_t ProtectedSECTOR = 0xFFF;
FLASH_OBProgramInitTypeDef config_new, config_old;
HAL_StatusTypeDef result = HAL_OK;
/* Get pages write protection status ****************************************/
HAL_FLASHEx_OBGetConfig(&config_old);
/* The parameter says whether we turn the protection on or off */
config_new.WRPState = modifier;
/* We want to modify only the Write protection */
config_new.OptionType = OPTIONBYTE_WRP;
/* No read protection, keep BOR and reset settings */
config_new.RDPLevel = OB_RDP_LEVEL_0;
config_new.USERConfig = config_old.USERConfig;
/* Get pages already write protected ****************************************/
ProtectedSECTOR = config_old.WRPSector | FLASH_SECTOR_TO_BE_PROTECTED;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
/* Unlock the Options Bytes *************************************************/
HAL_FLASH_OB_Unlock();
config_new.WRPSector = ProtectedSECTOR;
result = HAL_FLASHEx_OBProgram(&config_new);
return result;
}
示例3: writeEEPROM
// FIXME: HAL for now this will only work for F4/F7 as flash layout is different
void writeEEPROM(void)
{
// Generate compile time error if the config does not fit in the reserved area of flash.
BUILD_BUG_ON(sizeof(master_t) > FLASH_TO_RESERVE_FOR_CONFIG);
HAL_StatusTypeDef status;
uint32_t wordOffset;
int8_t attemptsRemaining = 3;
suspendRxSignal();
// prepare checksum/version constants
masterConfig.version = EEPROM_CONF_VERSION;
masterConfig.size = sizeof(master_t);
masterConfig.magic_be = 0xBE;
masterConfig.magic_ef = 0xEF;
masterConfig.chk = 0; // erase checksum before recalculating
masterConfig.chk = calculateChecksum((const uint8_t *) &masterConfig, sizeof(master_t));
// write it
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
while (attemptsRemaining--)
{
/* Fill EraseInit structure*/
FLASH_EraseInitTypeDef EraseInitStruct = {0};
EraseInitStruct.TypeErase = FLASH_TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = FLASH_VOLTAGE_RANGE_3; // 2.7-3.6V
EraseInitStruct.Sector = (FLASH_SECTOR_TOTAL-1);
EraseInitStruct.NbSectors = 1;
uint32_t SECTORError;
status = HAL_FLASHEx_Erase(&EraseInitStruct, &SECTORError);
if (status != HAL_OK)
{
continue;
}
else
{
for (wordOffset = 0; wordOffset < sizeof(master_t); wordOffset += 4)
{
status = HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, CONFIG_START_FLASH_ADDRESS + wordOffset, *(uint32_t *) ((char *) &masterConfig + wordOffset));
if(status != HAL_OK)
{
break;
}
}
}
if (status == HAL_OK) {
break;
}
}
HAL_FLASH_Lock();
// Flash write failed - just die now
if (status != HAL_OK || !isEEPROMContentValid()) {
failureMode(FAILURE_FLASH_WRITE_FAILED);
}
resumeRxSignal();
}
示例4: FLASH_If_Erase
/**
* @brief This function does an erase of all user flash area
* @param start: start of user flash area
* @retval FLASHIF_OK : user flash area successfully erased
* FLASHIF_ERASEKO : error occurred
*/
uint32_t FLASH_If_Erase(uint32_t start)
{
uint32_t NbrOfPages = 0;
uint32_t PageError = 0;
FLASH_EraseInitTypeDef pEraseInit;
HAL_StatusTypeDef status = HAL_OK;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
/* Get the sector where start the user flash area */
NbrOfPages = (USER_FLASH_END_ADDRESS - start)/FLASH_PAGE_SIZE;
pEraseInit.TypeErase = FLASH_TYPEERASE_PAGES;
pEraseInit.PageAddress = start;
pEraseInit.NbPages = NbrOfPages;
status = HAL_FLASHEx_Erase(&pEraseInit, &PageError);
/* Lock the Flash to disable the flash control register access (recommended
to protect the FLASH memory against possible unwanted operation) *********/
HAL_FLASH_Lock();
if (status != HAL_OK)
{
/* Error occurred while page erase */
return FLASHIF_ERASEKO;
}
return FLASHIF_OK;
}
示例5: stm32f3_flash_erase_block
/**
* @brief Erase flash block
* @note Block is the same thing as page in terms of stm32 lib:
* it's minimal erasable chunk of flash memory
*
* @param dev
* @param block
*
* @return Error code
*/
static int stm32f3_flash_erase_block(struct flash_dev *dev, uint32_t block) {
int err;
uint32_t page_err;
FLASH_EraseInitTypeDef erase_struct;
if (!stm32f3_flash_check_block(dev, block)) {
return -EINVAL;
}
HAL_FLASH_Unlock();
erase_struct = (FLASH_EraseInitTypeDef) {
.TypeErase = TYPEERASE_PAGES,
.PageAddress = dev->start + block * STM32F3_FLASH_PAGE_SIZE,
.NbPages = 1,
};
err = HAL_FLASHEx_Erase(&erase_struct, &page_err);
/* TODO check errcode */
/* Lock to prevent unwanted operations with flash memory */
HAL_FLASH_Lock();
return err;
}
static int stm32f3_flash_read(struct flash_dev *dev, uint32_t base, void* data, size_t len) {
size_t rlen = min(len, dev->end - dev->start + base);
/* read can be unaligned */
memcpy(data, (void *) dev->start + base, rlen);
return rlen;
}
示例6: ResetSSIDPasswordInMemory
/**
* @brief Erase Access Point parameters from FLASH
* @param None
* @retval System_Status_t (MODULE_SUCCESS/MODULE_ERROR)
*/
System_Status_t ResetSSIDPasswordInMemory(void)
{
/* Reset Calibration Values in FLASH */
System_Status_t status = MODULE_ERROR;
/* Erase First Flash sector */
FLASH_EraseInitTypeDef EraseInitStruct;
uint32_t SectorError = 0;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3;
EraseInitStruct.Sector = BLUEMSYS_FLASH_SECTOR;
EraseInitStruct.NbSectors = 1;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK){
/* Error occurred while sector erase.
User can add here some code to deal with this error.
SectorError will contain the faulty sector and then to know the code error on this sector,
user can call function 'HAL_FLASH_GetError()'
FLASH_ErrorTypeDef errorcode = HAL_FLASH_GetError(); */
printf("\n\rError while erasing FLASH memory");
} else {
status = MODULE_SUCCESS;
}
/* Lock the Flash to disable the flash control register access (recommended
to protect the FLASH memory against possible unwanted operation) *********/
HAL_FLASH_Lock();
return status;
}
示例7: ErasePage
void ErasePage(uint32_t pageAddress)
{
FLASH_EraseInitTypeDef EraseInitStruct;
uint32_t FirstPage = 0, NbOfPages = 0, BankNumber = 0, PAGEError = 0;
/* Unlock the Flash to enable the flash control register access */
HAL_FLASH_Unlock();
/* Clear OPTVERR bit set on virgin samples */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);
/* Get the 1st page to erase */
FirstPage = GetPage(pageAddress);
/* Get the number of pages to erase from 1st page */
NbOfPages = 1;
/* Get the bank */
BankNumber = GetBank(pageAddress);
/* Fill EraseInit structure*/
EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
EraseInitStruct.Banks = BankNumber;
EraseInitStruct.Page = FirstPage;
EraseInitStruct.NbPages = NbOfPages;
HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError);
HAL_FLASH_Lock();
}
示例8: stm32f3_flash_program
/**
* @brief Write data to flash memory
*
* @param dev
* @param base
* @param data
* @param len
*
* @return Negative error code
*/
static int stm32f3_flash_program(struct flash_dev *dev, uint32_t base, const void* data, size_t len) {
int err = 0;
int offset;
if (!stm32f3_flash_check_align(base, len)
|| ((uintptr_t) data & 0x1) != 0) {
return -EINVAL;
}
if (!stm32f3_flash_check_range(dev, base, len)) {
return -EFBIG;
}
HAL_FLASH_Unlock();
/* Write data halfword by halfword */
for (offset = 0; offset < len; offset += 2) {
if (HAL_OK != HAL_FLASH_Program(TYPEPROGRAM_HALFWORD,
dev->start + base + offset,
*((uint32_t*) data + offset)))
return -1; /* TODO: set appropriate code */
}
/* Lock to prevent unwanted operations with flash memory */
HAL_FLASH_Lock();
return err;
}
示例9: flash_write
void flash_write(const uint32_t *src, uint32_t dst, uint32_t size)
{
// Unlock flash
HAL_FLASH_Unlock();
#if defined(MCU_SERIES_H7)
// Program the flash 32 bytes at a time.
for (int i=0; i<size/32; i++) {
if (HAL_FLASH_Program(TYPEPROGRAM_WORD, dst, (uint64_t)(uint32_t) src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
__fatal_error();
}
src += 8;
dst += 32;
}
#else
// Program the flash 4 bytes at a time.
for (int i=0; i<size/4; i++) {
if (HAL_FLASH_Program(TYPEPROGRAM_WORD, dst, *src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
__fatal_error();
}
src += 1;
dst += 4;
}
#endif
// lock the flash
HAL_FLASH_Lock();
}
示例10: main
/**
* @brief Main program.
* @param None
* @retval None
*/
int main(void)
{
/* STM32F103xB HAL library initialization:
- Configure the Flash prefetch
- Systick timer is configured by default as source of time base, but user
can eventually implement his proper time base source (a general purpose
timer for example or other time source), keeping in mind that Time base
duration should be kept 1ms since PPP_TIMEOUT_VALUEs are defined and
handled in milliseconds basis.
- Set NVIC Group Priority to 4
- Low Level Initialization
*/
HAL_Init();
/* Configure the system clock to 64 MHz */
SystemClock_Config();
/* Unlock the Flash Program Erase controller */
HAL_FLASH_Unlock();
/* EEPROM Init */
EE_Init();
/* --- Store successively many values of the three variables in the EEPROM ---*/
/* Store 0x1000 values of Variable1 in EEPROM */
for (VarValue = 1; VarValue <= 0x1000; VarValue++)
{
EE_WriteVariable(VirtAddVarTab[0], VarValue);
}
/* read the last stored variables data*/
EE_ReadVariable(VirtAddVarTab[0], &VarDataTab[0]);
/* Store 0x2000 values of Variable2 in EEPROM */
for (VarValue = 1; VarValue <= 0x2000; VarValue++)
{
EE_WriteVariable(VirtAddVarTab[1], VarValue);
}
/* read the last stored variables data*/
EE_ReadVariable(VirtAddVarTab[0], &VarDataTab[0]);
EE_ReadVariable(VirtAddVarTab[1], &VarDataTab[1]);
/* Store 0x3000 values of Variable3 in EEPROM */
for (VarValue = 1; VarValue <= 0x3000; VarValue++)
{
EE_WriteVariable(VirtAddVarTab[2], VarValue);
}
/* read the last stored variables data*/
EE_ReadVariable(VirtAddVarTab[0], &VarDataTab[0]);
EE_ReadVariable(VirtAddVarTab[1], &VarDataTab[1]);
EE_ReadVariable(VirtAddVarTab[2], &VarDataTab[2]);
while (1)
{
};
}
示例11: flash_erase
void flash_erase(uint32_t sector)
{
uint32_t SectorError = 0;
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = sector;
EraseInitStruct.NbSectors = 1;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
__fatal_error();
}
HAL_FLASH_Lock(); // lock the flash
}
示例12: FLASH_If_GetWriteProtectionStatus
/**
* @brief Returns the write protection status of application flash area.
* @param None
* @retval If a sector in application area is write-protected returned value is a combinaison
of the possible values : FLASHIF_PROTECTION_WRPENABLED, FLASHIF_PROTECTION_PCROPENABLED, ...
* If no sector is write-protected FLASHIF_PROTECTION_NONE is returned.
*/
uint32_t FLASH_If_GetWriteProtectionStatus(void)
{
uint32_t ProtectedPAGE = FLASHIF_PROTECTION_NONE;
FLASH_OBProgramInitTypeDef OptionsBytesStruct;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
/* Check if there are write protected sectors inside the user flash area ****/
HAL_FLASHEx_OBGetConfig(&OptionsBytesStruct);
/* Lock the Flash to disable the flash control register access (recommended
to protect the FLASH memory against possible unwanted operation) *********/
HAL_FLASH_Lock();
/* Get pages already write protected ****************************************/
ProtectedPAGE = ~(OptionsBytesStruct.WRPPage) & FLASH_PAGE_TO_BE_PROTECTED;
/* Check if desired pages are already write protected ***********************/
if(ProtectedPAGE != 0)
{
/* Some sectors inside the user flash area are write protected */
return FLASHIF_PROTECTION_WRPENABLED;
}
else
{
/* No write protected sectors inside the user flash area */
return FLASHIF_PROTECTION_NONE;
}
}
示例13: FLASH_If_Write
/**
* @brief This function writes a data buffer in flash (data are 32-bit aligned).
* @note After writing data buffer, the flash content is checked.
* @param destination: start address for target location
* @param p_source: pointer on buffer with data to write
* @param length: length of data buffer (unit is 32-bit word)
* @retval uint32_t 0: Data successfully written to Flash memory
* 1: Error occurred while writing data in Flash memory
* 2: Written Data in flash memory is different from expected one
*/
uint32_t FLASH_If_Write(uint32_t destination, uint32_t *p_source, uint32_t length)
{
uint32_t i = 0;
/* Unlock the Flash to enable the flash control register access *************/
HAL_FLASH_Unlock();
for (i = 0; (i < length) && (destination <= (USER_FLASH_END_ADDRESS-4)); i++)
{
/* Device voltage range supposed to be [2.7V to 3.6V], the operation will
be done by word */
if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, destination, *(uint32_t*)(p_source+i)) == HAL_OK)
{
/* Check the written value */
if (*(uint32_t*)destination != *(uint32_t*)(p_source+i))
{
/* Flash content doesn't match SRAM content */
return(FLASHIF_WRITINGCTRL_ERROR);
}
/* Increment FLASH destination address */
destination += 4;
}
else
{
/* Error occurred while writing data in Flash memory */
return (FLASHIF_WRITING_ERROR);
}
}
/* Lock the Flash to disable the flash control register access (recommended
to protect the FLASH memory against possible unwanted operation) *********/
HAL_FLASH_Lock();
return (FLASHIF_OK);
}
示例14: FLASH_If_Init
/**
* @brief Unlocks Flash for write access
* @param None
* @retval None
*/
void FLASH_If_Init(void)
{
HAL_FLASH_Unlock();
/* Clear pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR | FLASH_FLAG_ERSERR);
}
示例15: program_tftf_header
/**
* @brief Writes the contents fo the TFTF header to the TFTF_PARTITION
*/
int program_tftf_header(uint8_t *data, uint32_t size)
{
HAL_FLASH_Unlock();
program_flash_data((uint32_t)(PARTITION_TFTF_START), size, data);
HAL_FLASH_Lock();
return 0;
}